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2SK3767
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI)
2SK3767
Switching Regulator Applications
* * * * Low drain-source ON resistance: RDS (ON) = 3.3 (typ.) High forward transfer admittance: |Yfs| = 1.6S (typ.) Low leakage current: IDSS = 100A (VDS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 600 30 2 5 25 93 2 4 150 -55~150 Unit V V V A W mJ A mJ C C
1: Gate 2: Drain 3: Source
Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
JEDEC JEITA TOSHIBA
SC-67 2-10U1B
Weight : 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 5.0 62.5 Unit C/W C/W 1
2
Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: VDD = 90 V, Tch = 25Cinitial, L = 41mH, RG = 25 , IAR = 2 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution.
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2SK3767
Electrical Characteristics (Ta = 25C)
Characteristics Gate leakage current Gate-source breakdown voltage Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Fall time Turn-off time Total gate charge Gate-source charge Gate-drain charge Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) Yfs Ciss Crss Coss tr ton tf toff Qg Qgs Qgd VDD 400 V, VGS = 10 V, ID = 2A - 10 V VGS 0V 50 ID = 1A VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 25 V, VDS = 0 V IG = 10 A, VDS = 0 V VDS = 600 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 1 A VDS = 10 V, ID = 1 A Min 30 600 2.0 0.8 Typ. 3.3 1.6 320 30 100 15 55 20 80 9 5 4 Max 10 100 4.0 4.5 pF Unit A V A V V S

Output RL = 200 VDD 200 V -

ns
Switching time

nC
Duty < 1%, tw = 10 s =
Source-Drain Ratings and Characteristics (Ta = 25C)
Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition IDR = 2 A, VGS = 0 V IDR = 2 A, VGS = 0 V, dIDR/dt = 100 A/s Min Typ. 1000 3.5 Max 2 5 -1.7 Unit A A V ns C
Marking
K3767
Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish.
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ID - VDS
2 5.5 1.6 10 6 5.25 4 Common source Tc = 25C Pulse test
ID - VDS
10 6
(A)
(A)
3
ID
1.2
5
ID
Drain current
5.5
Drain current
2 5.25 5 1 4.75 4.5 VGS = 4V 0 0 4 8 12 16 20 24
0.8
4.75
0.4 VGS = 4V 0 0 4 8 12 16
4.5 Common source Tc = 25C Pulse test 20 24
Drain-source voltage
VDS
(V)
Drain-source voltage
VDS
(V)
ID - VGS
5 20
VDS - VGS
Common source
(V)
Common source 4 VDS = 20 V Pulse test 3
Tc = 25 16 Pulse test
ID
VDS Drain current voltage
12 8
Drain current
(A)
2
ID = 2A
-55 Tc=100 1 25 0 0
4
1
0.5
2
4
6
8
10
0 0
4
8
12
16
20
Gate-source voltage
VGS
(V)
Gatesource voltage
VGS
(V)
Yfs - ID
10 100
RDS (ON) - ID
Common source Tc = 25C Pulse test
Forward transfer admittanceYfs (S)
Tc = -55C 1 100 25
Drain source ON resistance RDS (ON) ()
10
0.1 Common source VDS = 20 V 0.01 0.01 0.1 Pulse test 1 10
VGS=10V
1 0.01
0.1
1
10
Drain current
ID
(A)
Drain current
ID
(A)
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2SK3767
RDS (ON) - Tc
10 Common source 10 Common source
IDR - VDS (A)
Tc = 25C Pulse test
Drain-source ON resistance RDS (ON) ()
VGS =10V 8 pulse test
IDR
1
ID=2A
4 0.5 2
1
Drain reverse current
6
0.1
10 3 1 VGS = 0, -1 V
0 -100
-50
0
50
100
150
200
0.01 0
-0.4
-0.8
-1.2
-1.6
Case temperature
(C)
Drain-source voltage
(V)
Capacitance - VDS
1000 Ciss 6
Vth - Tc
Common source
Vth (V)
5
VDS = 10 V ID = 1 mA Pulse test
(pF)
100
4
C
Capacitance
Coss
Gate threshold voltage
3
10 Common source VGS = 0 V f = 1 MHz Tc = 25C 1 0.1 1 10 100 Crss
2
1
0 -80
-40
0
40
80
120
150
Drian-source voltage
VDS
(V)
Case temperature
Tc
(C)
PD - Tc
50 800
Dynamic Input / output characteristics
16
(W)
(V)
PD
40
200V
VDS
600 100V 400 VDD = 400V
Drain power dissipation
Drain-source voltage
8
20
Common source 200 ID = 7.5 A Tc = 25C Pulse test 0 0 2 4 6 8 10 0 12 4
10
0 0 40 80 120 160
Case temperature
Tc
(C)
Total gate charge
Qg
(nC)
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Gate-source voltage
30
VGS
12
(V)
2SK3767
rth - tw
Normalized transient thermal impedance rth (t)/Rth (ch-c)
10 3 1 0.3 0.2 0.1 0.03 0.01 0.003 0.001 10 0.1 0.05 0.02 SINGLE PULSE 0.01 T Duty = t/T Rth (ch-c) = 5/W 100 1 10 100 1 10 PDM t Duty=0.5
Pulse width
tw
(s)
Safe operating area
100
200
EAS - Tch
(mJ)
10 ID max (PULSED) * 100 s * ID max (CONTINUOUS) *
160
EAS Avalanche energy
ID
(A)
120
80
Drain current
1
DC OPERATION Tc = 25C
1 ms *
40
0.1
Single nonrepetitive pulse Tc=25 Curves must be derated linearly with increase in temperature.
0 25
50
75
100
125
150
Channel temperature (initial)
VDSS max 100 1000
Tch (C)
0.01 1 10
15 V -15 V
BVDSS IAR VDD VDS
Darin-source voltage
VDS
(V)
TEST CIRCUIT RG = 25 VDD = 90 V, L = 41mH
WAVE FORM
AS =
1 B VDSS L I2 B 2 VDSS - VDD
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RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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